منابع مشابه
Statistics of Neutral Regions during Hydrogen Reionization
We present predictions for two statistical measures of the hydrogen reionization process at high redshift. The first statistic is the number of neutral segments identified in spectra of high-redshift QSOs as a function of their length. The second is the cross-correlation of neutral regions with possible sources of ionizing radiation. These independent probes are sensitive to the topology of the...
متن کاملA Study of Prompt Fast Ion Losses From Neutral Beam Injection in the DIII - D Tokamak
A study of the prompt losses of injected neutral beam born fast ions was conducted on the DIII-D tokamak at General Atomics using scintillator based fast ion loss detectors (FILD) and a reverse orbit calculation code. Prompt losses, also called first orbit losses, result from injected neutrals that are ionized on orbits that terminate to the outer wall before making a complete neoclassical, pol...
متن کاملBeam Losses And Machine Protection
Large hadron accelerators (existing and planned) can have enough stored beam energy to have dangerous effects on the accelerator and its environment in case of uncontrolled beam losses. This report will give examples of different kinds of beam losses together with the response of the beam loss monitors (BLMs), the machine protection system (MPS) and adjacent implications. Expected and unexpecte...
متن کاملBeam Cooling with ionisation losses
This novel type of particle “cooling”, called Ionization Cooling, is applicable to slow ( ) ions stored in a small ring. The many traversals through a thin foil enhance the nuclear reaction probability, in a steady configuration in which ionisation losses are recovered at each turn by a RF-cavity. For a uniform target “foil”, typically few hundred v ≈ 0.1c μg cm thick, transverse betatron oscil...
متن کاملHyperthermal neutral beam etching
A pulsed beam of hyperthermal fluorine atoms with an average translational energy of 4.8 eV has been used to demonstrate anisotropic etching of Si. For 1.4 Hz operation, a room-temperature etch rate of 300 Å/min for Si~100! has been measured at a distance of 30 cm from the source. A 14% undercutting for room-temperature etching of Novolac-masked Si features was achieved under single-collision c...
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ژورنال
عنوان ژورنال: Journal of Vacuum Science and Technology
سال: 1982
ISSN: 0022-5355
DOI: 10.1116/1.571517